Sun simulator is a machine that provides illumination approximating natural sunlight. The purpose of the solar simulator is to provide a controllable indoor test facility under laboratory conditions, used for the testing of solar cells, sun screen, plastics, and other materials and devices. Sun simulator Uses 4-wire interface to test device mounting and contacting fixtures.

Applications:

• Open circuit voltage (Voc) & short circuit currents (Isc)
• Short circuit current density (Jsc)
• Vmax & Imax
• Power maximum (Pmax)
• Fill Factor (FF)
• Efficiency
• Effects of temperature
• Measures light and dark I-V characteristics
• Repeated measurement of the same cell to study life cycle performance changes
• Qualifying and life-time testing of materials for space etc.

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a process by which thin films of various materials can be deposited on substrates/devices at lower temperature than that of standard Chemical Vapor Deposition (CVD). In PECVD processes, deposition is achieved by introducing reactant gases between parallel electrodes—a grounded electrode and an RF-energized electrode. The capacitive coupling between the electrodes excites the reactant gases into a plasma, which induces a chemical reaction and results in the reaction product being deposited on the substrate.
Device Specific Applications:

• Silicon Nitride
• Silicon Dioxide
• Silicon Oxy-nitride
• Silicon Carbide
• Amorphous Silicon
• Graphene
• Carbon Nanotubes
• Chalcogenides etc.

Magnetron Sputtering is a Physical Vapor Deposition process in which plasma is created and positively charged ions from the plasma are accelerated by an electrical field superimposed on the negatively charged electrode or "target". The positive ions are accelerated by potentials ranging from a few hundred to a few thousand electron volts and strike the negative electrode with sufficient force to dislodge and eject cluster of atoms from the target.
Applications:

• Product QC & QA
• Semiconductor Failure Analysis
• Nanotechnology
• Advanced electron microscope sample preparation
• Compound Semiconductor device development
• Aadvanced materials Research etc.

The Scanning Electron Microscopy (SEM) uses a focused beam of high-energy electrons to generate a variety of signals at the surface of solid specimens. The signals that derive from Electron-Sample interactions reveal information about the external morphology (texture), chemical composition, crystalline structure and orientation of materials making up the sample. Accelerated electrons in an SEM carry significant amounts of kinetic energy, and this energy is dissipated as a variety of signals produced by Electron-Sample interactions when the incident electrons are decelerated in the solid sample. These signals include secondary electrons that produce high quality SEM images.
Applications:

• Photovoltaics
• Nano/Micro Electronic Devices
• MEMS
• Organics
• Crack and Corrosion etc.

Photoluminescence spectroscopy is a contactless, versatile, nondestructive, powerful optical method of probing the electronic structure of devices/materials. Light is directed onto a sample, where it is absorbed and imparts excess energy into the material in a process called photo−excitation. One way this excess energy can be dissipated by the sample is through the emission of light, or luminescence. In the case of photo−excitation, this luminescence is called photoluminescence. Thus, photoluminescence is the spontaneous emission of light from a material under optical excitation. Electroluminescence is the result of radiative recombination of electrons & holes in a material, usually a semiconductor.
Applications:

• Band gap determination
• Impurity levels and defect detection
• Recombination mechanisms
• Surface structure and excited states
• Aggregation-caused quenching
• Internal quantum yield etc.

The technique, widely used in IC manufacturing, is designed to align and expose wafers/devices and samples duly coated with photosensitive resists. They are exposed through a glass/chrome mask using a short (few seconds) pulse of UV/EUV radiation. The parallelism between the wafer and the mask is generally achieved with an automated procedure of Wedge Error Compensation (WEC). Alignment is achieved with micrometer knobs down to a precision of about 0.5 µm. UV/EUV photolithography technique, in micro-fabrication, is widely utilized to pattern parts of a thin film or the bulk of a substrate.
Applications:

• 3D packaging
• Advanced packaging
• MEMS
• LED
• Compound semiconductors
• Power devices
• Photovoltaics
• Nanotechnology and wafer-level optics etc.

X-ray crystallography is a technique used for determining the atomic and molecular structure of a crystal, in which the crystalline atoms cause a beam of incident X-rays  to diffract  into many specific directions. By measuring the angles and intensities of these diffracted beams, a crysta-llographer can produce a three-dimensional picture of the density of electrons within the crystal. From this electron density, the mean positions of the atoms in the crystal can be determined, as well as their chemical bonds, their disorder and various other information.
Application:

• Crystallographic Plane Orientation
• Photovoltaics
• Detectors
• Scattering etc

Optical profilometry is a rapid, nondestructive, and noncontact surface metrology technique. Optical profilers Optical profilers are interference microscopes, and are used to measure height variations – such as surface roughness – on surfaces with great precision using the wavelength of light as the ruler. Optical interference profiling is a well-established method of obtaining accurate surface measurements.
Applications:

• Surface topography
• Film thickness
• Roughness
• Radius of curvature
• Scratch and crack analysis
• Photovoltaics
• MEMS/NEMS etc.